The RDAL233 is a low noise amplifier with high linearity and high power output for basestation application. The LNA is manufactured on Heterojunction Bipolar Transistor (HBT) process and has been designed for transceiver application in the 17000~2000MHz band. The package of this chip is 3×3mm2 QFN with 16 pins.

Features

*Advanced HBT process
*Low noise figure below 2.0

*34dBm@P1dBOutput Power
*Good linearity
*High efficiency

For technical questions and additional information about RDA Microelectronics Inc.:
Mailbox: info@rdamicro.com